elektronische bauelemente SSM0410S 3a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet 27-jun-2013 rev.b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sot-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? lower gate charge ? simple drive requirement ? fast switching characteristic marking package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t a =25c 3 a continuous drain current 1 @v gs =10v t a =70c i d 1.7 a pulsed drain current 2 i dm 5.5 a power dissipation 3 t a =25c p d 1.5 w operating junction & storage temperature t j , t stg -65~150 c thermal resistance rating thermal resistance junction-ambient 1 (max). r ja 85 c / w thermal resistance junction-case 1 (max). r jc 36 c / w ? ? g ? ? s d ?? ? 0410s ???? ? = date code sot-223 millimete r millimete r ref. min. max. ref. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 top view 1 2 3 4 a m b d l k f g h j e c
elektronische bauelemente SSM0410S 3a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet 27-jun-2013 rev.b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 4 - s v ds =5v, i d =2a gate-source leakage current i gss - - 100 na v gs = 20v - - 1 v ds =80v, v gs =0, t j =25c drain-source leakage current i dss - - 5 a v ds =80v, v gs =0, t j =55c - - 310 v gs =10v, i d =3a static drain-source on-resistance 2 r ds(on) - - 320 m ? v gs =4.5v, i d =1.7a total gate charge(10v) q g - 9.1 - gate-source charge q gs - 2 - gate-drain change q gd - 1.4 - nc i d =2a v ds =50v v gs =10v turn-on delay time 2 t d(on) - 2 - rise time t r - 21.6 - turn-off delay time t d(off) - 11.2 - fall time t f - 18.8 - ns v dd =50v i d =2a v gs =10v r g =3.3 ? r l =30 ? input capacitance c iss - 508 - output capacitance c oss - 29 - reverse transfer capacitance c rss - 16.4 - pf v gs =0 v ds =15v f =1.0mhz source-drain diode diode forward voltage 2 v sd - - 1.2 v i s =1a, v gs =0, t j =25c continuous source current 1,4 i s - - 3 a pulsed source current 2,4 i sm - - 5.5 a v d =v g =0, force current reverse recovery time t rr - 17.5 - ns reverse recovery charge q rr - 14 - nc i f =2a, dl/dt=100a/ s, t j =25c note: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the power dissipation is limited by 150c, junction temperature. 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation.
elektronische bauelemente SSM0410S 3a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet 27-jun-2013 rev.b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSM0410S 3a , 100v , r ds(on) 310 m ? n-channel enhancement mode power mosfet 27-jun-2013 rev.b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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